, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. n channel enhancement mode avalanche-rated buz 355 telephone: (973) 376-2922 pint pin 2 pin 3 type buz 355 vds 800v id 6a ^ds(on) 1.50 package to-218aa maximum ratings parameter continuous drain current rc = 29 c pulsed drain current tc = 25 c avalanche current.limited by 7jmax avalanche energy, periodic limited by 7]max avalanche energy, single pulse /d = 6 a, vdd = 50 v, rqs = 25 q l = 37.5 mh, 7] = 25 c gate source voltage power dissipation tc = 25 c operating temperature storage temperature thermal resistance, chip case thermal resistance, chip to ambient din humidity category, din 40 040 iec climatic category, din iec 68-1 symbol id 'dpuls /ar ^ar eas vgs plot t\g ^thjc ^thja values 6 24 5.1 15 720 20 125 -55... + 150 -55... + 150 <1 75 e 55/150/56 unit a mj v w c k/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics, at 71 = 25c, unless otherwise specified buz 355 parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 c gate threshold voltage \/gs=vbs, b = 1 ma zero gate voltage drain current vds = 800 v, vgs = 0 v, 7] = 25 c vds = 800 v, vgs = 0 v, 7] = 125 c gate-source leakage current vgs = 20 v, vds = o v drain-source on-resistance vgs = 10v, /o = 3.9a v(br)dss ^gs(th) /dss 'gss ^ds(on) 800 2.1 - - - - - 3 - 10 10 0.9 - 4 1 100 100 1.5 v ma na a
buz 355 electrical characteristics, at ti = 25c, unless otherwise specified parameter symbol values min. typ. max. unit dynamic characteristics transconductance vds> 2 * /d * ^ds(on)max, /d = 3-9 a input capacitance vqs = 0 v, vbs = 25 v, f= 1 mhz output capacitance vqb = o v, vds = 25 v, f- 1 mhz reverse transfer capacitance l/gs = 0 v, uds = 25 v, f = 1 mhz turn-on delay time vdd = 30 v, vgs = 10 v, /d = 2.1 a rgs = 50 ^ rise time vdd = 30v, \/gs = 10v, /d = 2.1 a rgs = 50 q turn-off delay time \/dd = 30v, vfes = 10v, /d = 2.1 a rgs = 50 d fall time vdd = 30v, vgs = 10v, /d = 2.1 a rgs = so fl 5fs p. iss coss qss td(on) ^r *d(off) 'f 2.5 - - - - - - - 6.8 1750 190 100 25 130 400 130 - 2350 290 150 40 200 530 175 s pf ns
buz 355 electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit reverse diode inverse diode continuous forward current tc = 25 c inverse diode direct current.pulsed tc = 25 c inverse diode forward voltage vgs = ov, /f= 12 a reverse recovery time vr = 100 v, /f=/s, d/f/df = 100 a/us reverse recovery charge vr = 100 v, /f=/s, d/f/d? = 100 a/us is ism vsd 'rr qrr - - - - - - - 0.95 0.3 2.5 4 16 1.4 - - a v us uc
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